Information card for entry 4074241

Structure parameters

• Formula: C13 H27 Co Ge O4 Si3
• Calculated formula: C13 H27 Co Ge O4 Si3
• SMILES: [Co]([Ge]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)(C#[O])(C#[O])(C#[O])C#[O]
• Title of publication: Cobalt-Assisted Silicon−Silicon Bond Activation
• Authors of publication: Zirngast, Michaela; Marschner, Christoph; Baumgartner, Judith
• Journal of publication: Organometallics
• Year of publication: 2006
• Journal volume: 25
• Journal issue: 20
• Pages of publication: 4897
• a: 15.84 ± 0.003 Å
• b: 9.4226 ± 0.0019 Å
• c: 15.874 ± 0.003 Å
• α: 90°
• β: 111.46 ± 0.03°
• γ: 90°
• Cell volume: 2205 ± 0.9 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 4
• Hermann-Mauguin space group symbol: P 1 21 1
• Hall space group symbol: P 2yb
• Residual factor for all reflections: 0.0766
• Residual factor for significantly intense reflections: 0.0746
• Weighted residual factors for significantly intense reflections: 0.1763
• Weighted residual factors for all reflections included in the refinement: 0.1782
• Goodness-of-fit parameter for all reflections included in the refinement: 1.129
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No