Information card for entry 4074820

Structure parameters

• Formula: C32 H65 N Os P2 Si2
• Calculated formula: C32 H65 N Os P2 Si2
• SMILES: [OsH2]12([P](C[Si](N2[Si](C)(C)C[P]1(C(C)(C)C)C(C)(C)C)(C)C)(C(C)(C)C)C(C)(C)C)#Cc1ccc(cc1)C(C)C
• Title of publication: Triple Benzylic Dehydrogenation by Osmium in an Amide Ligand Environment
• Authors of publication: Lee, Joo-Ho; Pink, Maren; Caulton, Kenneth G.
• Journal of publication: Organometallics
• Year of publication: 2006
• Journal volume: 25
• Journal issue: 4
• Pages of publication: 802
• a: 11.1319 ± 0.0004 Å
• b: 12.8735 ± 0.0005 Å
• c: 13.5173 ± 0.0005 Å
• α: 90.692 ± 0.001°
• β: 96.436 ± 0.001°
• γ: 98.44 ± 0.001°
• Cell volume: 1903.26 ± 0.12 ų
• Cell temperature: 130 ± 2 K
• Ambient diffraction temperature: 130 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0583
• Residual factor for significantly intense reflections: 0.0391
• Weighted residual factors for significantly intense reflections: 0.0711
• Weighted residual factors for all reflections included in the refinement: 0.0771
• Goodness-of-fit parameter for all reflections included in the refinement: 1.064
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No