Information card for entry 4075323

Structure parameters

• Formula: C26 H56 B10 Ru Si4
• Calculated formula: C26 H56 B10 Ru Si4
• SMILES: [Ru]12345([C]6789[C]%10%11%12(C(C)(C)[c]%131[cH]2[cH]3[cH]4[cH]5%13)[BH]126[BH]34%10[BH]56%11[BH]%107%12[BH]7%116[BH]645[BH]423[BH]281[BH]9%107[BH]%11642)(=C=C([Si](C)(C)C)[Si](C)(C)C)=C=C([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Reaction of [η5:σ-Me2C(C5H4)(C2B10H10)]Ru(NCCH3)2with Me3SiC⋮CR. Synthesis and Structural Characterization of Mononuclear Ruthenium Bis(vinylidene) and Vinylvinylidene Complexes
• Authors of publication: Sun, Yi; Chan, Hoi-Shan; Dixneuf, Pierre H.; Xie, Zuowei
• Journal of publication: Organometallics
• Year of publication: 2006
• Journal volume: 25
• Journal issue: 11
• Pages of publication: 2719
• a: 9.4134 ± 0.0019 Å
• b: 32.694 ± 0.007 Å
• c: 13.215 ± 0.003 Å
• α: 90°
• β: 110.86 ± 0.03°
• γ: 90°
• Cell volume: 3800.5 ± 1.6 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0602
• Residual factor for significantly intense reflections: 0.0508
• Weighted residual factors for significantly intense reflections: 0.1317
• Weighted residual factors for all reflections included in the refinement: 0.1381
• Goodness-of-fit parameter for all reflections included in the refinement: 1.11
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No