Information card for entry 4075781
| Formula |
C31 H32 Ge Si |
| Calculated formula |
C31 H32 Ge Si |
| SMILES |
[Ge](C1c2ccccc2c2ccccc12)(C)(C)C1([Si](C)(C)C)c2ccccc2c2ccccc12 |
| Title of publication |
Difluorenylsilanes, -germanes, and -stannanes Exhibiting an Unprecedented Parallel Arrangement of the Fluorene Units |
| Authors of publication |
Nemes, Gabriela Cretiu; Silaghi-Dumitrescu, Luminita; Silaghi-Dumitrescu, Ioan; Escudié, Jean; Ranaivonjatovo, Henri; Molloy, Kieran C.; Mahon, Mary F.; Zukerman-Schpector, Julio |
| Journal of publication |
Organometallics |
| Year of publication |
2005 |
| Journal volume |
24 |
| Journal issue |
6 |
| Pages of publication |
1134 |
| a |
8.5001 ± 0.0006 Å |
| b |
10.0668 ± 0.0009 Å |
| c |
15.399 ± 0.002 Å |
| α |
85.918 ± 0.008° |
| β |
87.093 ± 0.008° |
| γ |
87.936 ± 0.009° |
| Cell volume |
1311.9 ± 0.2 Å3 |
| Cell temperature |
293 ± 2 K |
| Ambient diffraction temperature |
293 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0571 |
| Residual factor for significantly intense reflections |
0.0336 |
| Weighted residual factors for significantly intense reflections |
0.0883 |
| Weighted residual factors for all reflections included in the refinement |
0.0967 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.055 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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