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Information card for entry 4076246
Preview
Coordinates | 4076246.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C52 H62 O Si2 |
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Calculated formula | C52 H62 O Si2 |
SMILES | c1(c(cccc1c1c(cc(cc1C)C)C)c1c(cc(cc1C)C)C)[Si](O[Si](c1c(cccc1c1c(cc(cc1C)C)C)c1c(cc(cc1C)C)C)(C)C)(C)C |
Title of publication | Selective Formation of Functionalized Disiloxanes from Terphenylfluorosilanes |
Authors of publication | Pietschnig, Rudolf; Merz, Klaus |
Journal of publication | Organometallics |
Year of publication | 2004 |
Journal volume | 23 |
Journal issue | 6 |
Pages of publication | 1373 |
a | 26.251 ± 0.002 Å |
b | 13.0494 ± 0.0009 Å |
c | 14.919 ± 0.001 Å |
α | 90° |
β | 120.065 ± 0.002° |
γ | 90° |
Cell volume | 4423.1 ± 0.5 Å3 |
Cell temperature | 133 ± 2 K |
Ambient diffraction temperature | 133 ± 2 K |
Number of distinct elements | 4 |
Space group number | 15 |
Hermann-Mauguin space group symbol | C 1 2/c 1 |
Hall space group symbol | -C 2yc |
Residual factor for all reflections | 0.0736 |
Residual factor for significantly intense reflections | 0.0429 |
Weighted residual factors for significantly intense reflections | 0.1013 |
Weighted residual factors for all reflections included in the refinement | 0.1106 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.923 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4076246.html
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