Information card for entry 4077591

Structure parameters

• Formula: C20 H34 N2 Si3
• Calculated formula: C20 H34 N2 Si3
• SMILES: C[Si]([C@H](c1ccccn1)[Si](C)(C)C)(C)[C@H](c1ccccn1)[Si](C)(C)C.C[Si]([C@@H](c1ccccn1)[Si](C)(C)C)(C)[C@@H](c1ccccn1)[Si](C)(C)C
• Title of publication: Hypervalent Silicon via Intramolecular Coordination in a Four-Membered Ring in Complexes of Substituted Pyridyl Ligands
• Authors of publication: van den Ancker, Tania R.; Raston, Colin L.; Skelton, Brian W.; White, Allan H.
• Journal of publication: Organometallics
• Year of publication: 2000
• Journal volume: 19
• Journal issue: 22
• Pages of publication: 4437
• a: 19.131 ± 0.007 Å
• b: 9.883 ± 0.003 Å
• c: 12.444 ± 0.008 Å
• α: 90°
• β: 99.97 ± 0.04°
• γ: 90°
• Cell volume: 2317.3 ± 1.9 ų
• Cell temperature: 293 K
• Ambient diffraction temperature: 293 K
• Number of distinct elements: 4
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.072
• Residual factor for significantly intense reflections: 0.047
• Weighted residual factors for all reflections: 0.053
• Weighted residual factors for all reflections included in the refinement: 0.05
• Goodness-of-fit parameter for all reflections: 1.756
• Goodness-of-fit parameter for all reflections included in the refinement: 2.052
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No