Information card for entry 4077652

Structure parameters

• Chemical name: Tris(trimethylsilyl)bismutan-tri-ethylgallium-Addukt
• Formula: C15 H42 Bi Ga Si3
• Calculated formula: C15 H42 Bi Ga Si3
• SMILES: [Bi]([Si](C)(C)C)([Si](C)(C)C)([Si](C)(C)C)[Ga](CC)(CC)CC
• Title of publication: Synthesis and X-ray Crystal Structures of Novel Al−Bi and Ga−Bi Compounds†
• Authors of publication: Kuczkowski, Andreas; Thomas, Florian; Schulz, Stephan; Nieger, Martin
• Journal of publication: Organometallics
• Year of publication: 2000
• Journal volume: 19
• Journal issue: 26
• Pages of publication: 5758
• a: 15.0169 ± 0.001 Å
• b: 10.0777 ± 0.0007 Å
• c: 17.0582 ± 0.0008 Å
• α: 90°
• β: 91.649 ± 0.004°
• γ: 90°
• Cell volume: 2580.4 ± 0.3 ų
• Cell temperature: 123 ± 2 K
• Ambient diffraction temperature: 123 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0604
• Residual factor for significantly intense reflections: 0.0434
• Weighted residual factors for significantly intense reflections: 0.0984
• Weighted residual factors for all reflections included in the refinement: 0.1023
• Goodness-of-fit parameter for all reflections included in the refinement: 0.981
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No