Information card for entry 4081786

Structure parameters

• Formula: C28 H57 Ga Ge N2
• Calculated formula: C28 H57 Ga Ge N2
• SMILES: [Ge]1(C(=C\C(C)(C)C)/[Ga](C(C)(C)C)(C(C)(C)C)[N]1(CC)CC)(C#CC(C)(C)C)N(CC)CC
• Title of publication: Cooperative Ge‒N Bond Activation in Hydrogallation Products of Alkynyl(diethylamino)germanes (Et2N)nGe(C≡CtBu)4‒n
• Authors of publication: Uhl, Werner; Tannert, Jens; Layh, Marcus; Hepp, Alexander; Grimme, Stefan; Risthaus, Tobias
• Journal of publication: Organometallics
• Year of publication: 2013
• Journal volume: 32
• Journal issue: 22
• Pages of publication: 6770
• a: 16.5402 ± 0.0007 Å
• b: 9.8646 ± 0.0004 Å
• c: 19.9517 ± 0.0008 Å
• α: 90°
• β: 91.527 ± 0.002°
• γ: 90°
• Cell volume: 3254.2 ± 0.2 ų
• Cell temperature: 153 ± 2 K
• Ambient diffraction temperature: 153 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0671
• Residual factor for significantly intense reflections: 0.038
• Weighted residual factors for significantly intense reflections: 0.0769
• Weighted residual factors for all reflections included in the refinement: 0.0861
• Goodness-of-fit parameter for all reflections included in the refinement: 1.018
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No