Information card for entry 4081796

Structure parameters

• Formula: C54 H82 O4 Si2
• Calculated formula: C54 H82 O4 Si2
• SMILES: [Si]([SiH](c1c(cc(cc1C(C)C)C(C)C)C(C)C)c1c(cc(cc1C(C)C)C(C)C)C(C)C)(O)(c1c(cc(cc1C(C)C)C(C)C)C(C)C)c1c(OC)cc(OC)cc1OC
• Title of publication: Potential Protecting Group Strategy for Disila Analogues of Vinyllithiums: Synthesis and Reactivity of a 2,4,6-Trimethoxyphenyl-Substituted Disilene
• Authors of publication: Meltzer, Antje; Majumdar, Moumita; White, Andrew J. P.; Huch, Volker; Scheschkewitz, David
• Journal of publication: Organometallics
• Year of publication: 2013
• Journal volume: 32
• Journal issue: 22
• Pages of publication: 6844
• a: 18.8601 ± 0.0009 Å
• b: 14.1435 ± 0.0007 Å
• c: 19.3532 ± 0.001 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 5162.4 ± 0.4 ų
• Cell temperature: 132 ± 2 K
• Ambient diffraction temperature: 132 ± 2 K
• Number of distinct elements: 4
• Space group number: 33
• Hermann-Mauguin space group symbol: P n a 21
• Hall space group symbol: P 2c -2n
• Residual factor for all reflections: 0.0544
• Residual factor for significantly intense reflections: 0.0439
• Weighted residual factors for significantly intense reflections: 0.1051
• Weighted residual factors for all reflections included in the refinement: 0.1114
• Goodness-of-fit parameter for all reflections included in the refinement: 1.031
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No