Information card for entry 4086835

Structure parameters

• Formula: C24 H54 Ge K N O9 Si3
• Calculated formula: C24 H54 Ge K N O9 Si3
• Title of publication: Electron Transfer and Modification of Oligosilanylsilatranes and Related Derivatives
• Authors of publication: Aghazadeh Meshgi, Mohammad; Baumgartner, Judith; Jouikov, Viatcheslav V.; Marschner, Christoph
• Journal of publication: Organometallics
• Year of publication: 2016
• a: 11.335 ± 0.002 Å
• b: 20.897 ± 0.004 Å
• c: 15.215 ± 0.003 Å
• α: 90°
• β: 99.1 ± 0.004°
• γ: 90°
• Cell volume: 3558.6 ± 1.2 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0969
• Residual factor for significantly intense reflections: 0.0838
• Weighted residual factors for significantly intense reflections: 0.2161
• Weighted residual factors for all reflections included in the refinement: 0.2262
• Goodness-of-fit parameter for all reflections included in the refinement: 1.073
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No