Information card for entry 4089546

Structure parameters

• Formula: C58 H54 Cs3 O4 Si2
• Calculated formula: C58 H54 Cs3 O4 Si2
• Title of publication: Silicon in a Negatively Charged Shell: Anions of Spirosilabifluorene
• Authors of publication: Zabula, Alexander V.; Rogachev, Andrey Yu.; Guzei, Ilia A.; West, Robert
• Journal of publication: Organometallics
• Year of publication: 2013
• Journal volume: 32
• Journal issue: 13
• Pages of publication: 3760
• a: 18.641 ± 0.007 Å
• b: 25.131 ± 0.009 Å
• c: 11.216 ± 0.004 Å
• α: 90°
• β: 104.53 ± 0.03°
• γ: 90°
• Cell volume: 5086 ± 3 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0367
• Residual factor for significantly intense reflections: 0.0297
• Weighted residual factors for significantly intense reflections: 0.0625
• Weighted residual factors for all reflections included in the refinement: 0.065
• Goodness-of-fit parameter for all reflections included in the refinement: 1.08
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Diffraction radiation X-ray symbol: K-L~3~
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No