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Information card for entry 4101375
Preview
| Coordinates | 4101375.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C23 H21 N2 O |
|---|---|
| Calculated formula | C23 H21 N2 O |
| SMILES | O=[N]1C(C)(C)C(N=C1c1ccc2ccc3cccc4ccc1c2c34)(C)C |
| Title of publication | 1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage. |
| Authors of publication | Wang, Ying; Wang, Hongmei; Liu, Yunqi; Di, Chong-An; Sun, Yanming; Wu, Weiping; Yu, Gui; Zhang, Deqing; Zhu, Daoben |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2006 |
| Journal volume | 128 |
| Journal issue | 40 |
| Pages of publication | 13058 - 13059 |
| a | 10.392 ± 0.002 Å |
| b | 7.2494 ± 0.0014 Å |
| c | 24.22 ± 0.005 Å |
| α | 90° |
| β | 98.63 ± 0.03° |
| γ | 90° |
| Cell volume | 1804 ± 0.6 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293 ± 2 K |
| Number of distinct elements | 4 |
| Space group number | 14 |
| Hermann-Mauguin space group symbol | P 1 21/n 1 |
| Hall space group symbol | -P 2yn |
| Residual factor for all reflections | 0.1745 |
| Residual factor for significantly intense reflections | 0.0947 |
| Weighted residual factors for significantly intense reflections | 0.1968 |
| Weighted residual factors for all reflections included in the refinement | 0.2394 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.041 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/4101375.html
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Users of the data should acknowledge the original authors of the
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