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Information card for entry 4101375
Preview
Coordinates | 4101375.cif |
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Original paper (by DOI) | HTML |
Formula | C23 H21 N2 O |
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Calculated formula | C23 H21 N2 O |
SMILES | O=[N]1C(C)(C)C(N=C1c1ccc2ccc3cccc4ccc1c2c34)(C)C |
Title of publication | 1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage. |
Authors of publication | Wang, Ying; Wang, Hongmei; Liu, Yunqi; Di, Chong-An; Sun, Yanming; Wu, Weiping; Yu, Gui; Zhang, Deqing; Zhu, Daoben |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2006 |
Journal volume | 128 |
Journal issue | 40 |
Pages of publication | 13058 - 13059 |
a | 10.392 ± 0.002 Å |
b | 7.2494 ± 0.0014 Å |
c | 24.22 ± 0.005 Å |
α | 90° |
β | 98.63 ± 0.03° |
γ | 90° |
Cell volume | 1804 ± 0.6 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 4 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.1745 |
Residual factor for significantly intense reflections | 0.0947 |
Weighted residual factors for significantly intense reflections | 0.1968 |
Weighted residual factors for all reflections included in the refinement | 0.2394 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.041 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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