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Information card for entry 4102021
Preview
Coordinates | 4102021.cif |
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Original paper (by DOI) | HTML |
Common name | C38 H52 N2 Si Ni |
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Formula | C38 H52 N2 Ni Si |
Calculated formula | C38 H52 N2 Ni Si |
SMILES | [Ni]12345([Si]6N(C(=CC(N6c6c(cccc6C(C)C)C(C)C)=C)C)c6c(cccc6C(C)C)C(C)C)[c]6([cH]1[c]2([cH]3[c]4([cH]56)C)C)C |
Title of publication | Steering S-H and N-H Bond Activation by a Stable N-Heterocyclic Silylene: Different Addition of H2S, NH3, and Organoamines on a Silicon(II) Ligand versus Its Si(II)\ρightarrowNi(CO)3Complex |
Authors of publication | Antje Meltzer; Shigeyoshi Inoue; Carsten Präsang; Matthias Driess |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2010 |
Journal volume | 132 |
Pages of publication | 3038 - 3046 |
a | 13.8174 ± 0.0011 Å |
b | 15.2926 ± 0.0012 Å |
c | 16.7367 ± 0.0013 Å |
α | 90° |
β | 91.214 ± 0.006° |
γ | 90° |
Cell volume | 3535.7 ± 0.5 Å3 |
Cell temperature | 173 ± 2 K |
Ambient diffraction temperature | 173 ± 2 K |
Number of distinct elements | 5 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/c 1 |
Hall space group symbol | -P 2ybc |
Residual factor for all reflections | 0.1336 |
Residual factor for significantly intense reflections | 0.0393 |
Weighted residual factors for significantly intense reflections | 0.0546 |
Weighted residual factors for all reflections included in the refinement | 0.0639 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.683 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4102021.html
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structural data.