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Information card for entry 4103255
Preview
Coordinates | 4103255.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C26 H61 Ce Cl N4 O Si6 |
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Calculated formula | C26 H61 Ce Cl N4 O Si6 |
SMILES | [Ce](Cl)(N([Si](C)(C)C)[Si](C)(C)C)(N([Si](C)(C)C)[Si](C)(C)C)(N([Si](C)(C)C)[Si](C)(C)C)[N]#Cc1ccc(OC)cc1 |
Title of publication | Facile Access to Tetravalent Cerium Compounds: One-Electron Oxidation Using Iodine(III) Reagents |
Authors of publication | Peter Dröse; Alan R. Crozier; Samira Lashkari; Jochen Gottfriedsen; Steffen Blaurock; Cristian G. Hrib; Cäcilia Maichle-Mössmer; Christoph Schädle; Reiner Anwander; Frank T. Edelmann |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2010 |
Journal volume | 132 |
Pages of publication | 14046 - 14047 |
a | 11.861 ± 0.002 Å |
b | 19.126 ± 0.004 Å |
c | 18.467 ± 0.004 Å |
α | 90° |
β | 94.46 ± 0.03° |
γ | 90° |
Cell volume | 4176.6 ± 1.5 Å3 |
Cell temperature | 143 ± 2 K |
Ambient diffraction temperature | 143 ± 2 K |
Number of distinct elements | 7 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.0381 |
Residual factor for significantly intense reflections | 0.0319 |
Weighted residual factors for significantly intense reflections | 0.0722 |
Weighted residual factors for all reflections included in the refinement | 0.0744 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.131 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4103255.html
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