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Information card for entry 4103366
Preview
| Coordinates | 4103366.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | Al Br Cl4 Sb2 Te2 |
|---|---|
| Calculated formula | Al Br Cl4 Sb2 Te2 |
| Title of publication | Synthesis in Ionic Liquids: [Bi2Te2Br](AlCl4), a Direct Gap Semiconductor with a Cationic Framework |
| Authors of publication | Kanishka Biswas; Qichun Zhang; In Chung; Jung-Hwan Song; John Androulakis; Arthur J. Freeman; Mercouri G. Kanatzidis |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2010 |
| Journal volume | 132 |
| Pages of publication | 14760 - 14762 |
| a | 21.216 ± 0.004 Å |
| b | 8.2816 ± 0.0017 Å |
| c | 13.126 ± 0.003 Å |
| α | 90° |
| β | 98.71 ± 0.03° |
| γ | 90° |
| Cell volume | 2279.7 ± 0.8 Å3 |
| Cell temperature | 100 ± 2 K |
| Ambient diffraction temperature | 100 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 15 |
| Hermann-Mauguin space group symbol | C 1 2/c 1 |
| Hall space group symbol | -C 2yc |
| Residual factor for all reflections | 0.0412 |
| Residual factor for significantly intense reflections | 0.0245 |
| Weighted residual factors for significantly intense reflections | 0.0625 |
| Weighted residual factors for all reflections included in the refinement | 0.068 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.012 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/4103366.html
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