Information card for entry 4103544

Structure parameters

• Formula: C42 H52 N2 Si2
• Calculated formula: C42 H52 N2 Si2
• SMILES: C(#C[Si](C(C)C)(C(C)C)C(C)C)c1c2cc3c(cccn3)cc2c(c2cc3c(cccn3)cc12)C#C[Si](C(C)C)(C(C)C)C(C)C
• Title of publication: High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences
• Authors of publication: Yi-Yang Liu; Cheng-Li Song; Wei-Jing Zeng; Kai-Ge Zhou; Zi-Fa Shi; Chong-Bo Ma; Feng Yang; Hao-Li Zhang; Xiong Gong
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2010
• Journal volume: 132
• Pages of publication: 16349 - 16351
• a: 7.546 ± 0.003 Å
• b: 7.959 ± 0.003 Å
• c: 16.748 ± 0.006 Å
• α: 78.581 ± 0.006°
• β: 89.392 ± 0.006°
• γ: 79.341 ± 0.007°
• Cell volume: 968.6 ± 0.6 ų
• Cell temperature: 294 ± 2 K
• Ambient diffraction temperature: 294 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1678
• Residual factor for significantly intense reflections: 0.0742
• Weighted residual factors for significantly intense reflections: 0.1075
• Weighted residual factors for all reflections included in the refinement: 0.1165
• Goodness-of-fit parameter for all reflections included in the refinement: 1.904
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No