Information card for entry 4104163

Structure parameters

• Formula: C22 H66 Ge2 Si8
• Calculated formula: C22 H66 Ge2 Si8
• SMILES: C[Si]([Ge]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)[Si](C)(C)[Ge]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)(C)C
• Title of publication: Shuttling Germanium Atoms into Branched Polysilanes
• Authors of publication: Harald Wagner; Judith Baumgartner; Thomas Müller; Christoph Marschner
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2009
• Journal volume: 131
• Pages of publication: 5022 - 5023
• a: 9.1381 ± 0.0018 Å
• b: 9.1761 ± 0.0018 Å
• c: 13.632 ± 0.003 Å
• α: 103.2 ± 0.03°
• β: 91.95 ± 0.03°
• γ: 114.33 ± 0.03°
• Cell volume: 1003.4 ± 0.5 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0528
• Residual factor for significantly intense reflections: 0.0439
• Weighted residual factors for significantly intense reflections: 0.1157
• Weighted residual factors for all reflections included in the refinement: 0.1191
• Goodness-of-fit parameter for all reflections included in the refinement: 0.937
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No