Information card for entry 4106537

Structure parameters

• Formula: C32 H56 N3 P Si3
• Calculated formula: C32 H56 N3 P Si3
• SMILES: [Si]12([N](=C(N1C(C)(C)C)c1ccccc1)C(C)(C)C)N([Si](C)(C)C)[Si](P(C=2C12CC3CC(CC(C3)C1)C2)C)(C)C
• Title of publication: Striking Stability of a Substituted Silicon(II) Bis(trimethylsilyl)amide and the Facile Si-Me Bond Cleavage without a Transition Metal Catalyst
• Authors of publication: Sakya S. Sen; Jakob Hey; Regine Herbst-Irmer; Herbert W. Roesky; Dietmar Stalke
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2011
• Journal volume: 133
• Pages of publication: 12311 - 12316
• a: 12.866 ± 0.002 Å
• b: 16.639 ± 0.002 Å
• c: 17.09 ± 0.003 Å
• α: 90.72 ± 0.02°
• β: 108.43 ± 0.03°
• γ: 91.82 ± 0.02°
• Cell volume: 3468.2 ± 1.1 ų
• Cell temperature: 101 ± 2 K
• Ambient diffraction temperature: 101 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0471
• Residual factor for significantly intense reflections: 0.0366
• Weighted residual factors for significantly intense reflections: 0.0937
• Weighted residual factors for all reflections included in the refinement: 0.0998
• Goodness-of-fit parameter for all reflections included in the refinement: 1.026
• Diffraction radiation wavelength: 0.56086 Å
• Diffraction radiation type: AgKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No