Information card for entry 4107355

Structure parameters

• Common name: Eilaf002
• Chemical name: Eilaf002
• Formula: C50 H32 N2
• Calculated formula: C50 H32 N2
• SMILES: c12ccccc1c(c1n2c2cc3c(cc4c(c5c(cccc5)n4c3cc2c(c1)c1ccccc1)c1ccccc1)c1ccccc1)c1ccccc1
• Title of publication: High Mobility Single-Crystal Field-Effect Transistors from Bisindoloquinoline Semiconductors
• Authors of publication: Eilaf Ahmed; Alejandro L. Briseno; Younan Xia; Samson A. Jenekhe
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2008
• Journal volume: 130
• Pages of publication: 1118 - 1119
• a: 18.8707 ± 0.0011 Å
• b: 13.9159 ± 0.0008 Å
• c: 12.4345 ± 0.0007 Å
• α: 90°
• β: 95.581 ± 0.003°
• γ: 90°
• Cell volume: 3249.9 ± 0.3 ų
• Cell temperature: 130 ± 2 K
• Ambient diffraction temperature: 130 ± 2 K
• Number of distinct elements: 3
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.1826
• Residual factor for significantly intense reflections: 0.0579
• Weighted residual factors for significantly intense reflections: 0.1025
• Weighted residual factors for all reflections included in the refinement: 0.1311
• Goodness-of-fit parameter for all reflections included in the refinement: 0.963
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No