Information card for entry 4107458

Structure parameters

• Formula: C24 H56 N2 Ni P4 S2 Se2
• Calculated formula: C24 H56 N2 Ni P4 S2 Se2
• Title of publication: The Chemical Vapor Deposition of Nickel Phosphide or Selenide Thin Films from a Single Precursor
• Authors of publication: Arunkumar Panneerselvam; Mohammad A. Malik; Mohammad Afzaal; Paul O'Brien; Madeleine Helliwell
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2008
• Journal volume: 130
• Pages of publication: 2420 - 2421
• a: 15.7383 ± 0.001 Å
• b: 15.7383 ± 0.001 Å
• c: 13.9964 ± 0.0012 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 3466.8 ± 0.4 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 7
• Space group number: 88
• Hermann-Mauguin space group symbol: I 41/a :2
• Hall space group symbol: -I 4ad
• Residual factor for all reflections: 0.0321
• Residual factor for significantly intense reflections: 0.0253
• Weighted residual factors for significantly intense reflections: 0.0638
• Weighted residual factors for all reflections included in the refinement: 0.0684
• Goodness-of-fit parameter for all reflections included in the refinement: 1.082
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No