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Information card for entry 4109965
Preview
| Coordinates | 4109965.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C26 H46 Cl2 N4 Si5 |
|---|---|
| Calculated formula | C26 H46 Cl2 N4 Si5 |
| SMILES | C1(c2ccccc2)=[N]([Si]2(N1[Si](C)(C)C)(Cl)(Cl)[N](=C(c1ccccc1)N2[Si](C)(C)C)[Si](C)(C)C)[Si](C)(C)C |
| Title of publication | Synthesis and Structures of Heteroleptic Silylenes |
| Authors of publication | Cheuk-Wai So; Herbert W. Roesky; Prabhuodeyara M. Gurubasavaraj; Rainer B. Oswald; Michael T. Gamer; Peter G. Jones; Steffen Blaurock |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2007 |
| Journal volume | 129 |
| Pages of publication | 12049 - 12054 |
| a | 21.2473 ± 0.0015 Å |
| b | 8.9149 ± 0.0005 Å |
| c | 18.8561 ± 0.0014 Å |
| α | 90° |
| β | 90.016 ± 0.006° |
| γ | 90° |
| Cell volume | 3571.7 ± 0.4 Å3 |
| Cell temperature | 200 ± 2 K |
| Ambient diffraction temperature | 200 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 15 |
| Hermann-Mauguin space group symbol | C 1 2/c 1 |
| Hall space group symbol | -C 2yc |
| Residual factor for all reflections | 0.0433 |
| Residual factor for significantly intense reflections | 0.0321 |
| Weighted residual factors for significantly intense reflections | 0.0812 |
| Weighted residual factors for all reflections included in the refinement | 0.0857 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.027 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/4109965.html
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