Information card for entry 4111607

Structure parameters

• Formula: C34 H38 S2 Si2
• Calculated formula: C34 H38 S2 Si2
• Title of publication: Organic Field-Effect Transistors from Solution-Deposited Functionalized Acenes with Mobilities as High as 1 cm2/V.s
• Authors of publication: Marcia M. Payne; Sean R. Parkin; John E. Anthony; Chung-Chen Kuo; Thomas N. Jackson
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2005
• Journal volume: 127
• Pages of publication: 4986 - 4987
• a: 6.7318 ± 0.0001 Å
• b: 7.2511 ± 0.0002 Å
• c: 16.695 ± 0.0004 Å
• α: 98.1442 ± 0.0011°
• β: 94.5289 ± 0.0011°
• γ: 103.918 ± 0.001°
• Cell volume: 777.59 ± 0.03 ų
• Cell temperature: 90 ± 0.2 K
• Ambient diffraction temperature: 90 ± 0.2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0502
• Residual factor for significantly intense reflections: 0.0365
• Weighted residual factors for significantly intense reflections: 0.0913
• Weighted residual factors for all reflections included in the refinement: 0.0962
• Goodness-of-fit parameter for all reflections included in the refinement: 1.102
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No