Information card for entry 4111636

Structure parameters

• Formula: C18 H8 F6 N2 S2
• Calculated formula: C18 H8 F6 N2 S2
• Title of publication: High Performance n-Type Organic Field-Effect Transistors Based on π-Electronic Systems with Trifluoromethylphenyl Groups
• Authors of publication: Shinji Ando; Jun-ichi Nishida; Hirokazu Tada; Youji Inoue; Shizuo Tokito; Yoshiro Yamashita
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2005
• Journal volume: 127
• Pages of publication: 5336 - 5337
• a: 10.65 ± 0.02 Å
• b: 6.6 ± 0.01 Å
• c: 11.9 ± 0.02 Å
• α: 90°
• β: 91.94 ± 0.07°
• γ: 90°
• Cell volume: 836 ± 2 ų
• Cell temperature: 93.2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for significantly intense reflections: 0.0528
• Weighted residual factors for all reflections included in the refinement: 0.0677
• Goodness-of-fit parameter for all reflections included in the refinement: 1.908
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No