Information card for entry 4112096

Structure parameters

• Common name: Dipp*Ge(CHSiMe3)(n2CHSiMe3)2GeDipp*.n-hexane
• Formula: C78 H118 Ge2 N4 Si3
• Calculated formula: C78 H118 Ge2 N4 Si3
• Title of publication: Reactions of the Heavier Group 14 Element Alkyne Analogues Ar'EEAr' (Ar' = C6H3-2,6(C6H3-2,6-Pri2)2; E = Ge, Sn) with Unsaturated Molecules: Probing the Character of the EE Multiple Bonds
• Authors of publication: Chunming Cui; Marilyn M. Olmstead; James C. Fettinger; Geoffrey H. Spikes; Philip P. Power
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2005
• Journal volume: 127
• Pages of publication: 17530 - 17541
• a: 12.8515 ± 0.0009 Å
• b: 14.9117 ± 0.0011 Å
• c: 20.4565 ± 0.0015 Å
• α: 80.746 ± 0.003°
• β: 80.117 ± 0.003°
• γ: 83.322 ± 0.004°
• Cell volume: 3795.9 ± 0.5 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0514
• Residual factor for significantly intense reflections: 0.0356
• Weighted residual factors for significantly intense reflections: 0.0853
• Weighted residual factors for all reflections included in the refinement: 0.0937
• Goodness-of-fit parameter for all reflections included in the refinement: 1.023
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No