Information card for entry 4112634

Structure parameters

• Formula: C66.5 H118 K3 N8.5 O18 Si9
• Calculated formula: C66.5 H118 K3 N8.5 O18 Si9
• Title of publication: Naked Deltahedral Silicon Clusters in Solution: Synthesis and Characterization of Si93- and Si52-
• Authors of publication: Jose M. Goicoechea; Slavi C. Sevov
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2004
• Journal volume: 126
• Pages of publication: 6860 - 6861
• a: 13.6394 ± 0.0011 Å
• b: 14.8506 ± 0.0011 Å
• c: 22.7034 ± 0.0018 Å
• α: 86.614 ± 0.004°
• β: 79.222 ± 0.003°
• γ: 79.168 ± 0.003°
• Cell volume: 4435.7 ± 0.6 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1315
• Residual factor for significantly intense reflections: 0.0653
• Weighted residual factors for significantly intense reflections: 0.135
• Weighted residual factors for all reflections included in the refinement: 0.1511
• Goodness-of-fit parameter for all reflections included in the refinement: 0.83
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No