Information card for entry 4114466

Structure parameters

• Formula: Ga0.5 Gd5 Ge3.5
• Calculated formula: Ga0.52 Gd5 Ge3.52
• Title of publication: Phase Transformation Driven by Valence Electron Concentration: Tuning Interslab Bond Distances in Gd5GaxGe4-x
• Authors of publication: Yurij Mozharivskyj; Wonyoung Choe; Alexandra O. Pecharsky; Gordon J. Miller
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2003
• Journal volume: 125
• Pages of publication: 15183 - 15190
• a: 7.6638 ± 0.0009 Å
• b: 14.8667 ± 0.0017 Å
• c: 7.8149 ± 0.0009 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 890.39 ± 0.18 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 3
• Space group number: 62
• Hermann-Mauguin space group symbol: P n m a
• Hall space group symbol: -P 2ac 2n
• Residual factor for all reflections: 0.05
• Residual factor for significantly intense reflections: 0.0462
• Weighted residual factors for significantly intense reflections: 0.0986
• Weighted residual factors for all reflections included in the refinement: 0.1004
• Goodness-of-fit parameter for all reflections included in the refinement: 1.113
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No