Information card for entry 4114948

Structure parameters

• Formula: C32 H48 N2 Nb P2 Si4
• Calculated formula: C32 H48 N2 Nb P2 Si4
• SMILES: [Nb]1234([P]5(C[Si](N2[Si](C[P]1(C[Si]([N]3[Si](C5)(C)C)(C)C)c1ccccc1)(C)C)(C)C)c1ccccc1)C=C4c1ccccc1
• Title of publication: Nitride Formation by Thermolysis of a Kinetically Stable Niobium Dinitrogen Complex
• Authors of publication: Michael D. Fryzuk; Christopher M. Kozak; Michael R. Bowdridge; Brian O. Patrick; Steven J. Rettig
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2002
• Journal volume: 124
• Pages of publication: 8389 - 8397
• a: 15.8295 ± 0.0006 Å
• b: 12.521 ± 0.0004 Å
• c: 19.466 ± 0.001 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 3858.2 ± 0.3 ų
• Cell temperature: 198.2 K
• Ambient diffraction temperature: 198.2 K
• Number of distinct elements: 6
• Space group number: 33
• Hermann-Mauguin space group symbol: P n a 21
• Hall space group symbol: P 2c -2n
• Residual factor for all reflections: 0.048
• Residual factor for significantly intense reflections: 0.027
• Weighted residual factors for all reflections: 0.0702
• Weighted residual factors for all reflections included in the refinement: 0.0702
• Goodness-of-fit parameter for all reflections: 0.826
• Goodness-of-fit parameter for all reflections included in the refinement: 0.826
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No