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Information card for entry 4115650
Preview
Coordinates | 4115650.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C28 H70 Cl16 N6 Si8 |
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Calculated formula | C28 H70 Cl16 N6 Si8 |
SMILES | [Si]1([Si]([Si]([Si]([Si]([Si]1(Cl)Cl)(Cl)Cl)(Cl)Cl)(Cl)Cl)(Cl)Cl)(Cl)Cl.[SiH2]12([N+](CC[N]1(CC[N]2(CC)CC)CC)(CC)CC)Cl.[SiH2]12([N+](CC[N]1(CC[N]2(CC)CC)CC)(CC)CC)Cl.[Cl-].[Cl-] |
Title of publication | Amine-Promoted Disproportionation and Redistribution of Trichlorosilane: Formation of Tetradecachlorocyclohexasilane Dianion1 |
Authors of publication | Seok-Bong Choi; Beon-Kyu Kim; Philip Boudjouk; Dean G. Grier |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2001 |
Journal volume | 123 |
Pages of publication | 8117 - 8118 |
a | 19.7106 ± 0.0018 Å |
b | 22.1508 ± 0.0019 Å |
c | 27.13 ± 0.002 Å |
α | 90° |
β | 90° |
γ | 90° |
Cell volume | 11845.1 ± 1.7 Å3 |
Cell temperature | 295 ± 2 K |
Ambient diffraction temperature | 295 ± 2 K |
Number of distinct elements | 5 |
Space group number | 61 |
Hermann-Mauguin space group symbol | P b c a |
Hall space group symbol | -P 2ac 2ab |
Residual factor for all reflections | 0.1329 |
Residual factor for significantly intense reflections | 0.0638 |
Weighted residual factors for significantly intense reflections | 0.1579 |
Weighted residual factors for all reflections included in the refinement | 0.1967 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.045 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4115650.html
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