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Information card for entry 4117510
Preview
| Coordinates | 4117510.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C32 H68 P4 Ru Si |
|---|---|
| Calculated formula | C32 H68 P4 Ru Si |
| Title of publication | Selective Photochemistry at Stereogenic Metal and Ligand Centers of cis-[Ru(diphosphine)2(H)2]: Preparative, NMR, Solid State, and Laser Flash Studies |
| Authors of publication | Marius V. Câmpian; Robin N. Perutz; Barbara Procacci; Robert J. Thatcher; Olga Torres; Adrian C. Whitwood |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2012 |
| Journal volume | 134 |
| Pages of publication | 3480 - 3497 |
| a | 10.7597 ± 0.0006 Å |
| b | 17.135 ± 0.001 Å |
| c | 20.224 ± 0.0011 Å |
| α | 90° |
| β | 105.116 ± 0.001° |
| γ | 90° |
| Cell volume | 3599.6 ± 0.4 Å3 |
| Cell temperature | 110 ± 2 K |
| Ambient diffraction temperature | 110 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 4 |
| Hermann-Mauguin space group symbol | P 1 21 1 |
| Hall space group symbol | P 2yb |
| Residual factor for all reflections | 0.0342 |
| Residual factor for significantly intense reflections | 0.0309 |
| Weighted residual factors for significantly intense reflections | 0.0655 |
| Weighted residual factors for all reflections included in the refinement | 0.0673 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.034 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
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