Information card for entry 4117824

Structure parameters

• Formula: C34 H24 Cl3 F3 N9 O3 Rh S
• Calculated formula: C34 H24 Cl3 F3 N9 O3 Rh S
• SMILES: [Rh]123([N](=Nc4[n]1cccc4)c1ccc(cc1)Cl)([N](=Nc1[n]2cccc1)c1ccc(Cl)cc1)[N](=Nc1[n]3cccc1)c1ccc(Cl)cc1.S(=O)(=O)([O-])C(F)(F)F
• Title of publication: Azo Anion Radical Complex of Rhodium as a Molecular Memory Switching Device: Isolation, Characterization, and Evaluation of Current-Voltage Characteristics
• Authors of publication: Nanda D. Paul; Utpal Rana; Sreetosh Goswami; Tapan K. Mondal; Sreebrata Goswami
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2012
• Journal volume: 134
• Pages of publication: 6520 - 6523
• a: 12.5259 ± 0.0004 Å
• b: 21.7719 ± 0.0007 Å
• c: 14.6165 ± 0.0005 Å
• α: 90°
• β: 114.146 ± 0.001°
• γ: 90°
• Cell volume: 3637.3 ± 0.2 ų
• Cell temperature: 120 ± 2 K
• Ambient diffraction temperature: 120 ± 2 K
• Number of distinct elements: 8
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0472
• Residual factor for significantly intense reflections: 0.0325
• Weighted residual factors for significantly intense reflections: 0.077
• Weighted residual factors for all reflections included in the refinement: 0.0842
• Goodness-of-fit parameter for all reflections included in the refinement: 1.033
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No