Information card for entry 4118452

Structure parameters

• Formula: Ce Ga8.1 Pd2.9
• Calculated formula: Ce Ga8.13333 Pd2.86667
• Title of publication: Structures and Phase Transitions of CePd3+xGa8-x: New Variants of the BaHg11 Structure Type
• Authors of publication: Melanie C. Francisco; Christos D. Malliakas; Robin T. Macaluso; Joseph Prestigiacomo; Neel Haldolaarachchige; Philip W. Adams; David P. Young; Ying Jia; Helmut Claus; K.E. Gray; Mercouri G. Kanatzidis
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2012
• Journal volume: 134
• Pages of publication: 12998 - 13009
• a: 8.4643 ± 0.0009 Å
• b: 8.4643 ± 0.0009 Å
• c: 8.4643 ± 0.0009 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 606.42 ± 0.11 ų
• Cell temperature: 298 ± 2 K
• Ambient diffraction temperature: 298 ± 2 K
• Number of distinct elements: 3
• Space group number: 221
• Hermann-Mauguin space group symbol: P m -3 m
• Hall space group symbol: -P 4 2 3
• Residual factor for all reflections: 0.0386
• Residual factor for significantly intense reflections: 0.0352
• Weighted residual factors for significantly intense reflections: 0.0584
• Weighted residual factors for all reflections included in the refinement: 0.0592
• Goodness-of-fit parameter for all reflections included in the refinement: 1.402
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No