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Information card for entry 4122025
Preview
Coordinates | 4122025.cif |
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Original paper (by DOI) | HTML |
Formula | C36 H51 Al N2 Si |
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Calculated formula | C36 H51 Al N2 Si |
SMILES | [Al@H]1([Si@@H](C)c2ccccc2)N(C(=CC(=[N]1c1c(cccc1C(C)C)C(C)C)C)C)c1c(cccc1C(C)C)C(C)C.[Al@@H]1([Si@H](C)c2ccccc2)N(C(=CC(=[N]1c1c(cccc1C(C)C)C(C)C)C)C)c1c(cccc1C(C)C)C(C)C |
Title of publication | Oxidative Addition of σ Bonds to an Al(I) Center. |
Authors of publication | Chu, Terry; Korobkov, Ilia; Nikonov, Georgii I. |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2014 |
Journal volume | 136 |
Journal issue | 25 |
Pages of publication | 9195 - 9202 |
a | 12.0366 ± 0.0012 Å |
b | 12.3508 ± 0.0013 Å |
c | 12.6164 ± 0.0013 Å |
α | 70.633 ± 0.006° |
β | 87.367 ± 0.006° |
γ | 79.059 ± 0.006° |
Cell volume | 1737 ± 0.3 Å3 |
Cell temperature | 200 ± 2 K |
Ambient diffraction temperature | 200 ± 2 K |
Number of distinct elements | 5 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0651 |
Residual factor for significantly intense reflections | 0.0484 |
Weighted residual factors for significantly intense reflections | 0.1178 |
Weighted residual factors for all reflections included in the refinement | 0.1277 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.056 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4122025.html
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Users of the data should acknowledge the original authors of the
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