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Information card for entry 4122318
Preview
| Coordinates | 4122318.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | Sb8 Se24 Sn5 Tl4 |
|---|---|
| Calculated formula | Sb2.66667 Se8 Sn1.66667 Tl1.33333 |
| Title of publication | The New Phase [Tl4Sb6Se10][Sn5Sb2Se14]: A Naturally Formed Semiconducting Heterostructure with Two-Dimensional Conductance. |
| Authors of publication | Fang, Lei; Iyer, Ratnasabapathy G.; Tan, Gangjian; West, Damien J.; Zhang, Shengbai; Kanatzidis, Mercouri G. |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2014 |
| Journal volume | 136 |
| Journal issue | 31 |
| Pages of publication | 11079 - 11084 |
| a | 42.95 ± 0.03 Å |
| b | 3.967 ± 0.002 Å |
| c | 13.369 ± 0.008 Å |
| α | 90° |
| β | 98.813 ± 0.011° |
| γ | 90° |
| Cell volume | 2251 ± 2 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293 ± 2 K |
| Number of distinct elements | 4 |
| Space group number | 12 |
| Hermann-Mauguin space group symbol | C 1 2/m 1 |
| Hall space group symbol | -C 2y |
| Residual factor for all reflections | 0.1179 |
| Residual factor for significantly intense reflections | 0.0572 |
| Weighted residual factors for significantly intense reflections | 0.129 |
| Weighted residual factors for all reflections included in the refinement | 0.1551 |
| Goodness-of-fit parameter for all reflections included in the refinement | 0.954 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/4122318.html
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