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Information card for entry 4122458
Preview
Coordinates | 4122458.cif |
---|---|
Original paper (by DOI) | HTML |
Common name | EthyltrisupersilylGe9 |
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Formula | C29 H86 Ge9 Si12 |
Calculated formula | C29 H86 Ge9 Si12 |
SMILES | [Ge]123([Ge]4[Ge]56([Ge]74([Ge]4([Ge]17)([Ge]3[Ge]64[Ge]25)[Si]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)CC)[Si]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)[Si]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C |
Title of publication | Synthesis, structures, and solution dynamics of tetrasubstituted nine-atom germanium deltahedral clusters. |
Authors of publication | Li, Feng; Sevov, Slavi C. |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2014 |
Journal volume | 136 |
Journal issue | 34 |
Pages of publication | 12056 - 12063 |
a | 23.163 ± 0.005 Å |
b | 23.872 ± 0.005 Å |
c | 23.166 ± 0.005 Å |
α | 90° |
β | 99.96 ± 0.03° |
γ | 90° |
Cell volume | 12617 ± 5 Å3 |
Cell temperature | 120 ± 2 K |
Ambient diffraction temperature | 120 ± 2 K |
Number of distinct elements | 4 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.0571 |
Residual factor for significantly intense reflections | 0.035 |
Weighted residual factors for significantly intense reflections | 0.0699 |
Weighted residual factors for all reflections included in the refinement | 0.0793 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.012 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4122458.html
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