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Information card for entry 4122776
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Coordinates | 4122776.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C26 H14 B O4 |
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Calculated formula | C26 H14 B O4 |
Title of publication | Enhanced Electrical Conductivity in a Substitutionally Doped Spiro-bis(phenalenyl)boron Radical Molecular Solid. |
Authors of publication | Pal, Sushanta K.; Bag, Pradip; Itkis, Mikhail E.; Tham, Fook S.; Haddon, Robert C. |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2014 |
Journal volume | 136 |
Journal issue | 42 |
Pages of publication | 14738 - 14741 |
a | 16.3111 ± 0.0012 Å |
b | 8.8173 ± 0.0006 Å |
c | 13.0729 ± 0.001 Å |
α | 90° |
β | 103.499 ± 0.001° |
γ | 90° |
Cell volume | 1828.2 ± 0.2 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 ± 2 K |
Number of distinct elements | 4 |
Space group number | 15 |
Hermann-Mauguin space group symbol | C 1 2/c 1 |
Hall space group symbol | -C 2yc |
Residual factor for all reflections | 0.0809 |
Residual factor for significantly intense reflections | 0.0485 |
Weighted residual factors for significantly intense reflections | 0.1215 |
Weighted residual factors for all reflections included in the refinement | 0.1373 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.046 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4122776.html
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