Information card for entry 4122852

Structure parameters

• Formula: C100 H52 In3 N4 O16
• Calculated formula: C100 H52 In3 N4 O16
• Title of publication: Facile Control of the Charge Density and Photocatalytic Activity of an Anionic Indium Porphyrin Framework via in Situ Metalation.
• Authors of publication: Johnson, Jacob A.; Zhang, Xu; Reeson, Tyler C.; Chen, Yu-Sheng; Zhang, Jian
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2014
• Pages of publication: 141028135635006
• a: 23.881 ± 0.002 Å
• b: 23.915 ± 0.002 Å
• c: 28.808 ± 0.002 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 16453 ± 2 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 58
• Hermann-Mauguin space group symbol: P n n m
• Hall space group symbol: -P 2 2n
• Residual factor for all reflections: 0.1738
• Residual factor for significantly intense reflections: 0.099
• Weighted residual factors for significantly intense reflections: 0.2567
• Weighted residual factors for all reflections included in the refinement: 0.2858
• Goodness-of-fit parameter for all reflections included in the refinement: 0.887
• Diffraction radiation wavelength: 0.4428 Å
• Diffraction radiation type: Synchrotron
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No