Information card for entry 4123545

Structure parameters

• Formula: C32 H41 Cl2 N P Si
• Calculated formula: C32 H41 Cl2 N P Si
• SMILES: Cl[Si](P(c1ccccc1)c1ccccc1)([C]1C(CC(N1c1c(cccc1C(C)C)C(C)C)(C)C)(C)C)Cl
• Title of publication: Stable Radicals from Commonly Used Precursors Trichlorosi-lane and Diphenylchlorophosphine.
• Authors of publication: Roy, Sudipta; Stückl, A Claudia; Demeshko, Serhiy; Dittrich, Birger; Meyer, Jann; Maity, Bholanath; Koley, Debasis; Schwederski, Brigitte; Kaim, Wolfgang; Roesky, Herbert W.
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2015
• Pages of publication: 150403102455008
• a: 16.3343 ± 0.001 Å
• b: 11.2426 ± 0.0007 Å
• c: 16.7723 ± 0.0011 Å
• α: 90°
• β: 101.258 ± 0.003°
• γ: 90°
• Cell volume: 3020.8 ± 0.3 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0503
• Residual factor for significantly intense reflections: 0.0473
• Weighted residual factors for significantly intense reflections: 0.1447
• Weighted residual factors for all reflections included in the refinement: 0.1487
• Goodness-of-fit parameter for all reflections included in the refinement: 1.112
• Diffraction radiation wavelength: 1.54178 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No