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Information card for entry 4123559
Preview
Coordinates | 4123559.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C34 H58 Ni2 Se2 |
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Calculated formula | C34 H58 Ni2 Se2 |
SMILES | [c]12([c]3([c]4([c]5([cH]1[Ni]12345[Se][Ni]2345([c]6([c]2([c]3([c]4([cH]56)C(C)C)C(C)C)C(C)C)C(C)C)[Se]1)C(C)C)C(C)C)C(C)C)C(C)C |
Title of publication | Electronic Structure of Ni2E2 Complexes (E = S, Se, Te) and a Global Analysis of M2E2 Compounds: A Case for Quantized E2(n-) Oxidation Levels with n = 2, 3, or 4. |
Authors of publication | Yao, Shu A.; Martin-Diaconescu, Vlad; Infante, Ivan; Lancaster, Kyle M.; Götz, Andreas W; DeBeer, Serena; Berry, John F. |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2015 |
Journal volume | 137 |
Journal issue | 15 |
Pages of publication | 4993 - 5011 |
a | 18.5781 ± 0.0005 Å |
b | 17.6925 ± 0.0005 Å |
c | 11.6287 ± 0.0003 Å |
α | 90° |
β | 115.355 ± 0.0012° |
γ | 90° |
Cell volume | 3454.08 ± 0.17 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 ± 2 K |
Number of distinct elements | 4 |
Space group number | 15 |
Hermann-Mauguin space group symbol | C 1 2/c 1 |
Hall space group symbol | -C 2yc |
Residual factor for all reflections | 0.0289 |
Residual factor for significantly intense reflections | 0.0232 |
Weighted residual factors for significantly intense reflections | 0.0945 |
Weighted residual factors for all reflections included in the refinement | 0.1018 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.843 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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Users of the data should acknowledge the original authors of the
structural data.