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Information card for entry 4124999
Preview
Coordinates | 4124999.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C88 H89 B F24 N4 Si2 |
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Calculated formula | C88 H89 B F24.003 N4 Si2 |
Title of publication | Addition of Small Electrophiles to N-Heterocyclic-Carbene-Stabilized Disilicon(0): A Revisit of the Isolobal Concept in Low-Valent Silicon Chemistry. |
Authors of publication | Arz, Marius I.; Straßmann, Martin; Geiß, Daniel; Schnakenburg, Gregor; Filippou, Alexander C. |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2016 |
Journal volume | 138 |
Journal issue | 13 |
Pages of publication | 4589 - 4600 |
a | 12.6984 ± 0.0004 Å |
b | 16.103 ± 0.0005 Å |
c | 21.2179 ± 0.0007 Å |
α | 86.027 ± 0.003° |
β | 88.262 ± 0.002° |
γ | 89.457 ± 0.003° |
Cell volume | 4326.1 ± 0.2 Å3 |
Cell temperature | 123 ± 2 K |
Ambient diffraction temperature | 123 ± 2 K |
Number of distinct elements | 6 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0878 |
Residual factor for significantly intense reflections | 0.0497 |
Weighted residual factors for significantly intense reflections | 0.1177 |
Weighted residual factors for all reflections included in the refinement | 0.1277 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.922 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | Yes |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4124999.html
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