Information card for entry 4127421

Structure parameters

• Formula: As32 Eu15 In22
• Calculated formula: As32 Eu15 In22
• Title of publication: Supertetrahedral Layers Based on GaAs or InAs.
• Authors of publication: Weippert, Valentin; Haffner, Arthur; Stamatopoulos, Alexis; Johrendt, Dirk
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2019
• Journal volume: 141
• Journal issue: 28
• Pages of publication: 11245 - 11252
• a: 23.703 ± 0.002 Å
• b: 23.702 ± 0.002 Å
• c: 22.337 ± 0.002 Å
• α: 90°
• β: 113.473 ± 0.002°
• γ: 90°
• Cell volume: 11510.7 ± 1.7 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 3
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0749
• Residual factor for significantly intense reflections: 0.0553
• Weighted residual factors for significantly intense reflections: 0.1499
• Weighted residual factors for all reflections included in the refinement: 0.164
• Goodness-of-fit parameter for all reflections included in the refinement: 1.059
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No