Crystallography Open Database

Information card for entry 4127423

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Coordinates	4127423.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	As8 Eu3 Ga6
Calculated formula	As8 Eu3 Ga6
Title of publication	Supertetrahedral Layers Based on GaAs or InAs.
Authors of publication	Weippert, Valentin; Haffner, Arthur; Stamatopoulos, Alexis; Johrendt, Dirk
Journal of publication	Journal of the American Chemical Society
Year of publication	2019
Journal volume	141
Journal issue	28
Pages of publication	11245 - 11252
a	22.74 ± 0.003 Å
b	22.747 ± 0.003 Å
c	25.505 ± 0.003 Å
α	90°
β	96.393 ± 0.002°
γ	90°
Cell volume	13111 ± 3 Å³
Cell temperature	293 ± 2 K
Ambient diffraction temperature	293 ± 2 K
Number of distinct elements	3
Space group number	15
Hermann-Mauguin space group symbol	C 1 2/c 1
Hall space group symbol	-C 2yc
Residual factor for all reflections	0.1663
Residual factor for significantly intense reflections	0.1306
Weighted residual factors for significantly intense reflections	0.289
Weighted residual factors for all reflections included in the refinement	0.312
Goodness-of-fit parameter for all reflections included in the refinement	1.177
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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