Information card for entry 4129217

Structure parameters

• Formula: C16 H18 F12 N2 O4 Zn
• Calculated formula: C16 H18 F12 N2 O4 Zn
• Title of publication: MOCVD-derived highly transparent, conductive zinc- and tin-doped indium oxide thin films: precursor synthesis, metastable phase film growth and characterization, and application as anodes in polymer light-emitting diodes.
• Authors of publication: Ni, Jun; Yan, He; Wang, Anchuang; Yang, Yu; Stern, Charlotte L.; Metz, Andrew W.; Jin, Shu; Wang, Lian; Marks, Tobin J.; Ireland, John R.; Kannewurf, Carl R.
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2005
• Journal volume: 127
• Journal issue: 15
• Pages of publication: 5613 - 5624
• a: 18.216 ± 0.006 Å
• b: 10.448 ± 0.002 Å
• c: 13.242 ± 0.004 Å
• α: 90°
• β: 105.617 ± 0.015°
• γ: 90°
• Cell volume: 2427.2 ± 1.2 ų
• Cell temperature: 280 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 6
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0963
• Residual factor for significantly intense reflections: 0.0447
• Weighted residual factors for significantly intense reflections: 0.1222
• Weighted residual factors for all reflections included in the refinement: 0.1454
• Goodness-of-fit parameter for all reflections included in the refinement: 0.953
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No