Information card for entry 4129485
| Formula |
C30 H33 N O3 Si |
| Calculated formula |
C30 H33 N O3 Si |
| SMILES |
[Si](Oc1ccc(c2c(C#N)cccc2)cc1)(C(C)C)(C(C)C)Cc1ccc(cc1)/C=C/C(=O)OC |
| Title of publication |
Remote para-C-H Functionalization of Arenes by a D-Shaped Biphenyl Template-Based Assembly. |
| Authors of publication |
Bag, Sukdev; Patra, Tuhin; Modak, Atanu; Deb, Arghya; Maity, Soham; Dutta, Uttam; Dey, Aniruddha; Kancherla, Rajesh; Maji, Arun; Hazra, Avijit; Bera, Milan; Maiti, Debabrata |
| Journal of publication |
Journal of the American Chemical Society |
| Year of publication |
2015 |
| Journal volume |
137 |
| Journal issue |
37 |
| Pages of publication |
11888 - 11891 |
| a |
7.786 ± 0.003 Å |
| b |
8.962 ± 0.003 Å |
| c |
18.708 ± 0.006 Å |
| α |
96.988 ± 0.005° |
| β |
90.855 ± 0.007° |
| γ |
95.807 ± 0.008° |
| Cell volume |
1288.6 ± 0.8 Å3 |
| Cell temperature |
100 K |
| Ambient diffraction temperature |
100 K |
| Number of distinct elements |
5 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0591 |
| Residual factor for significantly intense reflections |
0.0488 |
| Weighted residual factors for significantly intense reflections |
0.1357 |
| Weighted residual factors for all reflections included in the refinement |
0.1421 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1 |
| Diffraction radiation wavelength |
0.71075 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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