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Information card for entry 4131428
Preview
Coordinates | 4131428.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C40 H94 N6 Si10 |
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Calculated formula | C40 H94 N6 Si10 |
SMILES | [Si]([Si]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)(=[Si]([Si]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)N=C1N(C=CN1C(C)(C)C)C(C)(C)C)N=C1N(C=CN1C(C)(C)C)C(C)(C)C |
Title of publication | Twist of a Silicon-Silicon Double Bond: Selective Anti-Addition of Hydrogen to an Iminodisilene. |
Authors of publication | Wendel, Daniel; Szilvási, Tibor; Jandl, Christian; Inoue, Shigeyoshi; Rieger, Bernhard |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2017 |
Journal volume | 139 |
Journal issue | 27 |
Pages of publication | 9156 - 9159 |
a | 10.2224 ± 0.0002 Å |
b | 24.6439 ± 0.0004 Å |
c | 23.6839 ± 0.0004 Å |
α | 90° |
β | 95.701 ± 0.001° |
γ | 90° |
Cell volume | 5936.93 ± 0.18 Å3 |
Cell temperature | 100 K |
Ambient diffraction temperature | 100 K |
Number of distinct elements | 4 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.0534 |
Residual factor for significantly intense reflections | 0.0378 |
Weighted residual factors for significantly intense reflections | 0.0848 |
Weighted residual factors for all reflections included in the refinement | 0.09 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.018 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4131428.html
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Users of the data should acknowledge the original authors of the
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