Information card for entry 4131638

Structure parameters

• Formula: C32 H72 Sb2 Si8
• Calculated formula: C32 H72 Sb2 Si8
• SMILES: C12(C(C(=C1[Si](C)(C)C)[Si](C)(C)C)([Sb]2[Sb]1C2(C1(C(=C2[Si](C)(C)C)[Si](C)(C)C)[Si](C)(C)C)[Si](C)(C)C)[Si](C)(C)C)[Si](C)(C)C
• Title of publication: Bis(stibahousene).
• Authors of publication: Lee, Vladimir Ya; Ota, Kei; Ito, Yuki; Gapurenko, Olga A.; Sekiguchi, Akira; Minyaev, Ruslan M.; Minkin, Vladimir I.; Gornitzka, Heinz
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2017
• Journal volume: 139
• Journal issue: 39
• Pages of publication: 13897 - 13902
• a: 27.518 ± 0.004 Å
• b: 9.3225 ± 0.0013 Å
• c: 19.913 ± 0.003 Å
• α: 90°
• β: 109.766 ± 0.001°
• γ: 90°
• Cell volume: 4807.4 ± 1.2 ų
• Cell temperature: 150 K
• Ambient diffraction temperature: 150 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0418
• Residual factor for significantly intense reflections: 0.0413
• Weighted residual factors for significantly intense reflections: 0.0943
• Weighted residual factors for all reflections included in the refinement: 0.0945
• Goodness-of-fit parameter for all reflections included in the refinement: 1.296
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No