Crystallography Open Database

Information card for entry 4131750

Preview

Coordinates	4131750.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	C32 H32 Cl4 N4 O8 Pb2
Calculated formula	C32 H32 Cl4 N4 O8 Pb2
Title of publication	Design Strategy for Improving Optical and Electrical Properties and Stability of Lead-Halide Semiconductors.
Authors of publication	Sun, Cai; Xu, Gang; Jiang, Xiao-Ming; Wang, Guan-E; Guo, Pei-Yu; Wang, Ming-Sheng; Guo, Guo-Cong
Journal of publication	Journal of the American Chemical Society
Year of publication	2018
Journal volume	140
Journal issue	8
Pages of publication	2805 - 2811
a	13.4033 ± 0.0014 Å
b	7.6867 ± 0.0004 Å
c	17.4828 ± 0.0014 Å
α	90°
β	92.257 ± 0.009°
γ	90°
Cell volume	1799.8 ± 0.3 Å³
Cell temperature	293 ± 2 K
Ambient diffraction temperature	293.15 K
Number of distinct elements	6
Space group number	14
Hermann-Mauguin space group symbol	P 1 21/c 1
Hall space group symbol	-P 2ybc
Residual factor for all reflections	0.1103
Residual factor for significantly intense reflections	0.0768
Weighted residual factors for significantly intense reflections	0.178
Weighted residual factors for all reflections included in the refinement	0.2071
Goodness-of-fit parameter for all reflections included in the refinement	1.049
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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