Information card for entry 4132230

Structure parameters

• Formula: C39 H56 As Ga N2
• Calculated formula: C39 H56 As Ga N2
• Title of publication: Synthesis of a Gallaarsene {HC[C(Me)N-2,6- i-Pr₂-C₆H₃]₂}GaAsCp* Containing a Ga═As Double Bond.
• Authors of publication: Helling, Christoph; Wölper, Christoph; Schulz, Stephan
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2018
• Journal volume: 140
• Journal issue: 15
• Pages of publication: 5053 - 5056
• a: 11.8364 ± 0.0005 Å
• b: 18.1069 ± 0.0008 Å
• c: 18.3359 ± 0.0008 Å
• α: 87.481 ± 0.002°
• β: 81.731 ± 0.002°
• γ: 73.919 ± 0.002°
• Cell volume: 3736.7 ± 0.3 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0473
• Residual factor for significantly intense reflections: 0.0324
• Weighted residual factors for significantly intense reflections: 0.0754
• Weighted residual factors for all reflections included in the refinement: 0.0822
• Goodness-of-fit parameter for all reflections included in the refinement: 1.028
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No