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Information card for entry 4132396
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Coordinates | 4132396.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C48 H56 I8 N4 O4 Pb2 |
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Calculated formula | C48 H56 I8 N4 O4 Pb2 |
Title of publication | Enhanced Out-of-Plane Conductivity and Photovoltaic Performance in n = 1 Layered Perovskites through Organic Cation Design. |
Authors of publication | Passarelli, James V.; Fairfield, Daniel J.; Sather, Nicholas A.; Hendricks, Mark P.; Sai, Hiroaki; Stern, Charlotte L.; Stupp, Samuel I. |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2018 |
Journal volume | 140 |
Journal issue | 23 |
Pages of publication | 7313 - 7323 |
a | 12.5228 ± 0.0017 Å |
b | 12.4668 ± 0.0017 Å |
c | 39.555 ± 0.006 Å |
α | 90° |
β | 97.668 ± 0.003° |
γ | 90° |
Cell volume | 6120.1 ± 1.5 Å3 |
Cell temperature | 296 ± 2 K |
Ambient diffraction temperature | 296 K |
Number of distinct elements | 6 |
Space group number | 9 |
Hermann-Mauguin space group symbol | C 1 c 1 |
Hall space group symbol | C -2yc |
Residual factor for all reflections | 0.0414 |
Residual factor for significantly intense reflections | 0.0384 |
Weighted residual factors for significantly intense reflections | 0.0891 |
Weighted residual factors for all reflections included in the refinement | 0.0902 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.044 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4132396.html
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