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Information card for entry 4132738
Preview
Coordinates | 4132738.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C34 H72 Cl12 N2 Si4 |
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Calculated formula | C34 H72 Cl12 N2 Si4 |
Title of publication | Exhaustively Trichlorosilylated C<sub>1</sub> and C<sub>2</sub> Building Blocks: Beyond the Müller-Rochow Direct Process. |
Authors of publication | Georg, Isabelle; Teichmann, Julian; Bursch, Markus; Tillmann, Jan; Endeward, Burkhard; Bolte, Michael; Lerner, Hans-Wolfram; Grimme, Stefan; Wagner, Matthias |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2018 |
Journal volume | 140 |
Journal issue | 30 |
Pages of publication | 9696 - 9708 |
a | 11.4327 ± 0.0006 Å |
b | 11.8063 ± 0.0006 Å |
c | 19.5139 ± 0.0009 Å |
α | 85.921 ± 0.004° |
β | 85.777 ± 0.004° |
γ | 88.686 ± 0.004° |
Cell volume | 2619.7 ± 0.2 Å3 |
Cell temperature | 173 ± 2 K |
Ambient diffraction temperature | 173 ± 2 K |
Number of distinct elements | 5 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.073 |
Residual factor for significantly intense reflections | 0.0585 |
Weighted residual factors for significantly intense reflections | 0.1414 |
Weighted residual factors for all reflections included in the refinement | 0.1476 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.117 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | Yes |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4132738.html
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