Information card for entry 4133399
| Formula |
C32 H35 Ge O3 P |
| Calculated formula |
C32 H35 Ge O3 P |
| SMILES |
[Ge](C(=C\P(=O)(OC(C)C)OC(C)C)\c1ccccc1)(c1ccccc1)(c1ccccc1)c1ccccc1 |
| Title of publication |
Radical Germylzincation of α-Heteroatom-Substituted Alkynes. |
| Authors of publication |
de la Vega-Hernández, Karen; Romain, Elise; Coffinet, Anais; Bijouard, Kajetan; Gontard, Geoffrey; Chemla, Fabrice; Ferreira, Franck; Jackowski, Olivier; Perez-Luna, Alejandro |
| Journal of publication |
Journal of the American Chemical Society |
| Year of publication |
2018 |
| Journal volume |
140 |
| Journal issue |
50 |
| Pages of publication |
17632 - 17642 |
| a |
16.3298 ± 0.0009 Å |
| b |
12.8553 ± 0.0007 Å |
| c |
28.1785 ± 0.0016 Å |
| α |
90° |
| β |
97.582 ± 0.002° |
| γ |
90° |
| Cell volume |
5863.6 ± 0.6 Å3 |
| Cell temperature |
200 ± 1 K |
| Ambient diffraction temperature |
200 ± 1 K |
| Number of distinct elements |
5 |
| Space group number |
15 |
| Hermann-Mauguin space group symbol |
C 1 2/c 1 |
| Hall space group symbol |
-C 2yc |
| Residual factor for all reflections |
0.0338 |
| Residual factor for significantly intense reflections |
0.0273 |
| Weighted residual factors for significantly intense reflections |
0.0653 |
| Weighted residual factors for all reflections included in the refinement |
0.0683 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.05 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/4133399.html